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IRFBG30PBF-BE3

Vishay Siliconix

Product No:

IRFBG30PBF-BE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 3.1A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 2625

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.337

$2.337
10

$1.94465

$19.4465
100

$1.54793

$154.793
500

$1.309765

$654.8825
1000

$1.11131

$1111.31
2000

$1.055744

$2111.488
5000

$1.016054

$5080.27

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 1.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFBG30