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IRFD123PBF

Vishay Siliconix

Product No:

IRFD123PBF

Manufacturer:

Vishay Siliconix

Package:

4-HVMDIP

Batch:

-

Datasheet:

pdf.png

Description:

MOSFET N-CH 100V 1.3A 4DIP

Quantity:

Delivery:

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Payment:

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In Stock : 7421

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2635

    $1.2635

  • 10

    $1.1324

    $11.324

  • 100

    $0.88274

    $88.274

  • 500

    $0.72922

    $364.61

  • 1000

    $0.5757

    $575.7

  • 2000

    $0.53732

    $1074.64

  • 5000

    $0.510454

    $2552.27

  • 10000

    $0.491264

    $4912.64

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 4-HVMDIP
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.3W (Ta)
Series -
Package / Case 4-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number IRFD123

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