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IRFD213

Harris Corporation

Product No:

IRFD213

Manufacturer:

Harris Corporation

Package:

4-HVMDIP

Batch:

Datasheet:

Description:

MOSFET N-CH 250V 450MA 4DIP

Quantity:

Delivery:

Payment:

In Stock : 5563

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

468

$0.608

$284.544

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 270mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	4-HVMDIP
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	-
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	450mA (Ta)
Mfr	Harris Corporation
Package	Tube