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IRFD311

Harris Corporation

Product No:

IRFD311

Manufacturer:

Harris Corporation

Package:

4-DIP, Hexdip

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1332

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

300

$0.95

$285

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.6Ohm @ 200mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	4-DIP, Hexdip
Drain to Source Voltage (Vdss)	350 V
Power Dissipation (Max)	1W (Tc)
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk