Home / Single FETs, MOSFETs / IRFH5210TRPBF

IRFH5210TRPBF

Infineon Technologies

Product No:

IRFH5210TRPBF

Manufacturer:

Infineon Technologies

Package:

8-PQFN (5x6)

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 10A/55A 8PQFN

Quantity:

Delivery:

Payment:

In Stock : 1437

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.5105

$1.5105
10

$1.2388

$12.388
100

$0.963585

$96.3585
500

$0.816715

$408.3575
1000

$0.665304

$665.304
2000

$0.626306

$1252.612

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of IRFH5210TRPBF, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include IRFH5210TRPBF and the required quantity in the RFQ. GOOD can get the latest quotations of IRFH5210TRPBF without registration. IRFH5210TRPBF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	14.9mOhm @ 33A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.6W (Ta), 104W (Tc)
Series	HEXFET®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 55A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IRFH5210