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IRFH7110TRPBF

Infineon Technologies

Product No:

IRFH7110TRPBF

Manufacturer:

Infineon Technologies

Package:

8-PQFN (5x6)

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Description:

MOSFET N-CH 100V 11A/58A 8PQFN

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13.5mOhm @ 35A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.6W (Ta), 104W (Tc)
Series	HEXFET®
Package / Case	8-TQFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 58A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)