Home / FET, MOSFET Arrays / IRFHE4250DTRPBF

IRFHE4250DTRPBF

International Rectifier

Product No:

IRFHE4250DTRPBF

Manufacturer:

International Rectifier

Package:

32-PQFN (6x6)

Batch:

Datasheet:

Description:

HEXFET POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 9000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

156

$1.8335

$286.026

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IRFHE4250DTRPBF, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IRFHE4250DTRPBF and the required quantity in your RFQ. IICSEMI provides the latest quote for IRFHE4250DTRPBF without requiring registration. Latest information on IRFHE4250DTRPBF: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IRFHE4250DTRPBF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1735pF @ 13V, 4765pF @ 13V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V, 53nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package	32-PQFN (6x6)
Drain to Source Voltage (Vdss)	25V
Series	HEXFET®
Package / Case	32-PowerVFQFN
Technology	MOSFET (Metal Oxide)
Power - Max	156W (Tc)
Current - Continuous Drain (Id) @ 25°C	86A (Tc), 303A (Tc)
Mfr	International Rectifier
Package	Bulk
Base Product Number	IRFHE4250