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IRFHM830TRPBF

Infineon Technologies

Product No:

IRFHM830TRPBF

Manufacturer:

Infineon Technologies

Package:

8-PQFN-Dual (3.3x3.3)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 21A/40A PQFN

Quantity:

Delivery:

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Payment:

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In Stock : 8648

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.855

    $0.855

  • 10

    $0.7619

    $7.619

  • 100

    $0.59413

    $59.413

  • 500

    $0.49077

    $245.385

  • 1000

    $0.387448

    $387.448

  • 2000

    $0.361618

    $723.236

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2155 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.35V @ 50µA
Supplier Device Package 8-PQFN-Dual (3.3x3.3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.7W (Ta), 37W (Tc)
Series HEXFET®
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IRFHM830

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