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IRFHM8326TRPBF

Infineon Technologies

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IRFHM8326TRPBF

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Infineon Technologies

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MOSFET N-CH 30V 25A PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2496 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 50µA
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.8W (Ta), 37W (Tc)
Series	HEXFET®
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IRFHM8326