IRFI830G
Vishay Siliconix
Product No:
IRFI830G
Manufacturer:
Package:
TO-220-3
Batch:
-
Datasheet:
Description:
MOSFET N-CH 500V 3.1A TO220-3
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.9A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 35W (Tc) |
| Series | - |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IRFI830 |
Detail Info
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IRFI830G Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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