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IRFIB5N65A

Vishay Siliconix

Product No:

IRFIB5N65A

Manufacturer:

Vishay Siliconix

Package:

TO-220-3

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Datasheet:

Description:

MOSFET N-CH 650V 5.1A TO220-3

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	930mOhm @ 3.1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	60W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.1A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFIB5