Home / Single FETs, MOSFETs / IRFSL4229PBF

IRFSL4229PBF

Infineon Technologies

Product No:

IRFSL4229PBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Batch:

Datasheet:

Description:

MOSFET N-CH 250V 45A TO262

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of IRFSL4229PBF, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include IRFSL4229PBF and the required quantity in the RFQ. GOOD can get the latest quotations of IRFSL4229PBF without registration. IRFSL4229PBF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	48mOhm @ 26A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	330W (Tc)
Series	HEXFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube