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IRFSL4410PBF

Infineon Technologies

Product No:

IRFSL4410PBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 88A TO262

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 10mOhm @ 58A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 150µA
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 200W (Tc)
Series HEXFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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