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IRFU3412PBF

Infineon Technologies

Product No:

IRFU3412PBF

Manufacturer:

Infineon Technologies

Package:

IPAK (TO-251AA)

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Datasheet:

Description:

MOSFET N-CH 100V 48A IPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	25mOhm @ 29A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	IPAK (TO-251AA)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	140W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube