IRL8113PBF
onsemi
Product No:
IRL8113PBF
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
HEXFET POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 21A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 110W (Tc) |
| Series | HEXFET® |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Mfr | onsemi |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Bulk |
Detail Info
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IRL8113PBF Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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