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IRLU2905Z

Infineon Technologies

Product No:

IRLU2905Z

Manufacturer:

Infineon Technologies

Package:

I-PAK

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Datasheet:

Description:

MOSFET N-CH 55V 42A I-PAK

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	13.5mOhm @ 36A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	110W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube