Home / Single FETs, MOSFETs / ISZ0901NLSATMA1

ISZ0901NLSATMA1

Infineon Technologies

Product No:

ISZ0901NLSATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-25

Batch:

Datasheet:

Description:

25V, N-CH MOSFET, LOGIC LEVEL, P

Quantity:

Delivery:

Payment:

In Stock : 1065

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.741

$0.741
10

$0.6498

$6.498
100

$0.498085

$49.8085
500

$0.393756

$196.878
1000

$0.315001

$315.001

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of ISZ0901NLSATMA1, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include ISZ0901NLSATMA1 and the required quantity in the RFQ. GOOD can get the latest quotations of ISZ0901NLSATMA1 without registration. ISZ0901NLSATMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.1mOhm @ 20A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TDSON-8-25
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	26W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISZ0901