Home / Single FETs, MOSFETs / IXFH60N65X2-4

IXFH60N65X2-4

IXYS

Product No:

IXFH60N65X2-4

Manufacturer:

IXYS

Package:

TO-247-4L

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 60A TO247-4L

Quantity:

Delivery:

Payment:

In Stock : 183

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$11.9985

$11.9985
10

$10.5716

$105.716
100

$9.14299

$914.299
500

$8.285881

$4142.9405
1000

$7.600152

$7600.152

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXFH60N65X2-4, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXFH60N65X2-4 and the required quantity in your RFQ. IICSEMI provides the latest quote for IXFH60N65X2-4 without requiring registration. Latest information on IXFH60N65X2-4: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXFH60N65X2-4 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	108 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 4mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	780W (Tc)
Series	HiPerFET™, Ultra X2
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFH60