IXFN200N10P

IXYS

Product No:

IXFN200N10P

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Package:

SOT-227B

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Description:

MOSFET N-CH 100V 200A SOT-227B

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	235 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	7.5mOhm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 8mA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	680W (Tc)
Series	HiPerFET™, Polar
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Box
Base Product Number	IXFN200