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IXFY4N60P3

IXYS

Product No:

IXFY4N60P3

Manufacturer:

IXYS

Package:

TO-252AA

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Datasheet:

Description:

MOSFET N-CH 600V 4A TO252

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	365 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	114W (Tc)
Series	HiPerFET™, Polar3™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFY4