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IXTA1N170DHV

IXYS

Product No:

IXTA1N170DHV

Manufacturer:

IXYS

Package:

TO-263HV

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 1700V 1A TO263

Quantity:

Delivery:

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Payment:

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In Stock : 278

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $18.5725

    $18.5725

  • 10

    $17.06675

    $170.6675

  • 100

    $14.41416

    $1441.416

  • 500

    $12.822416

    $6411.208

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 16Ohm @ 500mA, 0V
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package TO-263HV
Drain to Source Voltage (Vdss) 1700 V
Power Dissipation (Max) 290W (Tc)
Series Depletion
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTA1

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