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IXTA1N200P3HV

IXYS

Product No:

IXTA1N200P3HV

Manufacturer:

IXYS

Package:

TO-263AA

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Datasheet:

Description:

MOSFET N-CH 2000V 1A TO263

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	646 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	23.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	40Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	2000 V
Power Dissipation (Max)	125W (Tc)
Series	Polar P3™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1