Home / Single FETs, MOSFETs / IXTA1R4N100P

IXTA1R4N100P

IXYS

Product No:

IXTA1R4N100P

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 1.4A TO263

Quantity:

Delivery:

Payment:

In Stock : 253

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.0305

$3.0305
10

$2.71985

$27.1985
100

$2.228605

$222.8605
500

$1.89715

$948.575
1000

$1.600009

$1600.009
2000

$1.52001

$3040.02
5000

$1.462858

$7314.29

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	63W (Tc)
Series	Polar
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1

Detail Info

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IXTA1R4N100P Tags

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