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IXTA1R6N100D2

IXYS

Product No:

IXTA1R6N100D2

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 1.6A TO263

Quantity:

Delivery:

Payment:

In Stock : 150

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.9545

$2.9545
10

$2.6524

$26.524
100

$2.17303

$217.303
500

$1.84984

$924.92
1000

$1.560109

$1560.109
2000

$1.482104

$2964.208
5000

$1.426387

$7131.935

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	100W (Tc)
Series	Depletion
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1