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IXTD1R4N60P 11

IXYS

Product No:

IXTD1R4N60P 11

Manufacturer:

IXYS

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Die

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Description:

MOSFET N-CH 600V 1.4A DIE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9Ohm @ 700mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 25µA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	50W (Tc)
Series	PolarHV™
Package / Case	Die
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTD1R4