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IXTD3N50P-2J

IXYS

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IXTD3N50P-2J

Manufacturer:

IXYS

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Die

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Description:

MOSFET N-CH 500V 3A DIE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	409 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2Ohm @ 1.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 50µA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	70W (Tc)
Series	PolarHV™
Package / Case	Die
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IXTD3N