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IXTF6N200P3

IXYS

Product No:

IXTF6N200P3

Manufacturer:

IXYS

Package:

ISOPLUS i4-PAC™

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Datasheet:

Description:

MOSFET N-CH 2000V 4A I4PAC

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.2Ohm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss)	2000 V
Power Dissipation (Max)	215W (Tc)
Series	Polar P3™
Package / Case	ISOPLUSi5-Pak™
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTF6