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IXTP3N120

IXYS

Product No:

IXTP3N120

Manufacturer:

IXYS

Package:

TO-220-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 1200V 3A TO220AB

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 200W (Tc)
Series HiPerFET™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTP3

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