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IXTQ130N10T

IXYS

Product No:

IXTQ130N10T

Manufacturer:

IXYS

Package:

TO-3P

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 130A TO3P

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-3P
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 360W (Tc)
Series Trench
Package / Case TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTQ130

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