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IXTT1N300P3HV

IXYS

Product No:

IXTT1N300P3HV

Manufacturer:

IXYS

Package:

TO-268HV (IXTT)

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Datasheet:

Description:

MOSFET N-CH 3000V 1A TO268

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	895 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	30.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-268HV (IXTT)
Drain to Source Voltage (Vdss)	3000 V
Power Dissipation (Max)	195W (Tc)
Series	Polar P3™
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTT1