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IXTT3N200P3HV

IXYS

Product No:

IXTT3N200P3HV

Manufacturer:

IXYS

Package:

TO-268HV (IXTT)

Batch:

Datasheet:

Description:

MOSFET N-CH 2000V 3A TO268

Quantity:

Delivery:

Payment:

In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$47.31

$47.31
10

$42.15435

$421.5435
100

$37.000885

$3700.0885

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8Ohm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-268HV (IXTT)
Drain to Source Voltage (Vdss)	2000 V
Power Dissipation (Max)	520W (Tc)
Series	Polar P3™
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTT3