Home / FET, MOSFET Arrays / MSCSM120AM50CT1AG

MSCSM120AM50CT1AG

Microchip Technology

Product No:

MSCSM120AM50CT1AG

Manufacturer:

Microchip Technology

Package:

SP1F

Batch:

Datasheet:

Description:

PM-MOSFET-SIC-SBD~-SP1F

Quantity:

Delivery:

Payment:

In Stock : 9

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$85.272

$85.272
100

$71.06

$7106

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for MSCSM120AM50CT1AG, please feel free to contact us. To facilitate the processing of your inquiry, kindly include MSCSM120AM50CT1AG and the required quantity in your RFQ. IICSEMI provides the latest quote for MSCSM120AM50CT1AG without requiring registration. Latest information on MSCSM120AM50CT1AG: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs MSCSM120AM50CT1AG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N Channel (Phase Leg)
Input Capacitance (Ciss) (Max) @ Vds	1990pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	137nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 1mA
Supplier Device Package	SP1F
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	245W (Tc)
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Mfr	Microchip Technology
Package	Tube
Base Product Number	MSCSM120