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NDC632P

Fairchild Semiconductor

Product No:

NDC632P

Package:

SuperSOT™-6

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 20V 2.7A SUPERSOT6

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 140mOhm @ 2.7A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SuperSOT™-6
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.6W (Ta)
Series -
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) -8V
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Package Bulk

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