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NP100P06PDG-E1-AY

Renesas Electronics America Inc

Product No:

NP100P06PDG-E1-AY

Manufacturer:

Renesas Electronics America Inc

Package:

TO-263

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Datasheet:

Description:

MOSFET P-CH 60V 100A TO263

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Renesas Electronics America Inc
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NP100P06