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NP160N04TDG-E1-AY

Renesas Electronics America Inc

Product No:

NP160N04TDG-E1-AY

Manufacturer:

Renesas Electronics America Inc

Package:

TO-263-7

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Datasheet:

Description:

MOSFET N-CH 40V 160A TO263-7

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2mOhm @ 80A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-263-7
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1.8W (Ta), 220W (Tc)
Series	-
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Mfr	Renesas Electronics America Inc
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)