Home / Single FETs, MOSFETs / NP80N04NDG-S18-AY

NP80N04NDG-S18-AY

Renesas Electronics America Inc

Product No:

NP80N04NDG-S18-AY

Manufacturer:

Renesas Electronics America Inc

Package:

TO-262

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 80A TO262

Quantity:

Delivery:

Payment:

In Stock : 400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

151

$1.9

$286.9

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NP80N04NDG-S18-AY, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NP80N04NDG-S18-AY and the required quantity in your RFQ. IICSEMI provides the latest quote for NP80N04NDG-S18-AY without requiring registration. Latest information on NP80N04NDG-S18-AY: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NP80N04NDG-S18-AY latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.8mOhm @ 40A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1.8W (Ta), 115W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Renesas Electronics America Inc
Package	Tube