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NP80N04PDG-E1B-AY

Renesas Electronics America Inc

Product No:

NP80N04PDG-E1B-AY

Package:

TO-263-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 80A TO263-3

Quantity:

Delivery:

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In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 151

    $1.9

    $286.9

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 40A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-263-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 1.8W (Ta), 115W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Renesas Electronics America Inc
Package Bulk

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