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NTC080N120SC1

onsemi

Product No:

NTC080N120SC1

Manufacturer:

onsemi

Package:

Die

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Description:

SIC MOS WAFER SALES 80MOHM 1200V

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NTC080N120SC1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NTC080N120SC1 and the required quantity in your RFQ. IICSEMI provides the latest quote for NTC080N120SC1 without requiring registration. Latest information on NTC080N120SC1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NTC080N120SC1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1112 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.3V @ 5mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	178W (Tc)
Series	-
Package / Case	Die
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Mfr	onsemi
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tray