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NTGS5120PT1G

Cypress Semiconductor Corp

Product No:

NTGS5120PT1G

Package:

6-TSOP

Batch:

-

Datasheet:

-

Description:

NTGS51PFTSO62.111MO

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 942 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 18.1 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 111mOhm @ 2.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 600mW (Ta)
Series Automotive, AEC-Q101
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Mfr Cypress Semiconductor Corp
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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