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NTH4L040N120M3S

onsemi

Product No:

NTH4L040N120M3S

Manufacturer:

onsemi

Package:

TO-247-4L

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Datasheet:

Description:

SILICON CARBIDE (SIC) MOSFET ELI

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	54mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 10mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	231W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube