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NTH4L080N120SC1

onsemi

Product No:

NTH4L080N120SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 29A TO247-4

Quantity:

Delivery:

Payment:

In Stock : 430

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$13.2715

$13.2715
10

$11.6907

$116.907
100

$10.110945

$1011.0945
500

$9.163073

$4581.5365
1000

$8.404754

$8404.754

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 5mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	170W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Mfr	onsemi
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	NTH4L080