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NTHL025N065SC1

onsemi

Product No:

NTHL025N065SC1

Manufacturer:

onsemi

Package:

TO-247-3

Batch:

-

Datasheet:

pdf.png

Description:

SIC MOS TO247-3L 650V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $24.206

    $24.206

  • 10

    $21.51085

    $215.1085

  • 100

    $18.81418

    $1881.418

  • 500

    $16.054753

    $8027.3765

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NTHL025N065SC1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NTHL025N065SC1 and the required quantity in your RFQ. IICSEMI provides the latest quote for NTHL025N065SC1 without requiring registration. Latest information on NTHL025N065SC1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NTHL025N065SC1 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs 164 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 28.5mOhm @ 45A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 15.5mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 348W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 99A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube

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