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NTMS4N01R2G

onsemi

Product No:

NTMS4N01R2G

Manufacturer:

onsemi

Package:

8-SOIC

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 20V 3.3A 8SOIC

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 40mOhm @ 4.2A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.2V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 770mW (Ta)
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Mfr onsemi
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number NTMS4N

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