Home / Single FETs, MOSFETs / NVBG080N120SC1

NVBG080N120SC1

onsemi

Product No:

NVBG080N120SC1

Manufacturer:

onsemi

Package:

D2PAK-7

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 30A D2PAK-7

Quantity:

Delivery:

Payment:

In Stock : 667

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$25.5075

$25.5075
10

$22.66225

$226.6225
100

$19.820895

$1982.0895

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NVBG080N120SC1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NVBG080N120SC1 and the required quantity in your RFQ. IICSEMI provides the latest quote for NVBG080N120SC1 without requiring registration. Latest information on NVBG080N120SC1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NVBG080N120SC1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1154 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 5mA
Supplier Device Package	D2PAK-7
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	179W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	onsemi
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tape & Reel (TR)
Base Product Number	NVBG080