Home / Single FETs, MOSFETs / NVH4L020N120SC1

NVH4L020N120SC1

onsemi

Product No:

NVH4L020N120SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 102A TO247

Quantity:

Delivery:

Payment:

In Stock : 497

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$77.8905

$77.8905
10

$71.10845

$711.0845
100

$64.32393

$6432.393

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NVH4L020N120SC1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NVH4L020N120SC1 and the required quantity in your RFQ. IICSEMI provides the latest quote for NVH4L020N120SC1 without requiring registration. Latest information on NVH4L020N120SC1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NVH4L020N120SC1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2943 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 20mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	510W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	102A (Tc)
Mfr	onsemi
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	NVH4L020