Home / FET, MOSFET Arrays / NVJD4152PT1G

NVJD4152PT1G

onsemi

Product No:

NVJD4152PT1G

Manufacturer:

onsemi

Package:

SC-88/SC70-6/SOT-363

Batch:

Datasheet:

Description:

NVJD4152 - Dual P-Channel Trench

Quantity:

Delivery:

Payment:

In Stock : 62524

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1776

$0.1615

$286.824

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NVJD4152PT1G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NVJD4152PT1G and the required quantity in your RFQ. IICSEMI provides the latest quote for NVJD4152PT1G without requiring registration. Latest information on NVJD4152PT1G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NVJD4152PT1G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Standard
Configuration	2 P-Channel
Input Capacitance (Ciss) (Max) @ Vds	155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	260mOhm @ 880mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	SC-88/SC70-6/SOT-363
Drain to Source Voltage (Vdss)	20V
Series	Automotive, AEC-Q101
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	272mW (Ta)
Current - Continuous Drain (Id) @ 25°C	880mA (Ta)
Mfr	onsemi
Package	Bulk