Home / Single FETs, MOSFETs / NVMJST2D6N08HTXG

NVMJST2D6N08HTXG

onsemi

Product No:

NVMJST2D6N08HTXG

Manufacturer:

onsemi

Package:

10-TCPAK

Batch:

Datasheet:

Description:

TRENCH 8 80V LFPAK 5X7

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NVMJST2D6N08HTXG, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NVMJST2D6N08HTXG and the required quantity in your RFQ. IICSEMI provides the latest quote for NVMJST2D6N08HTXG without requiring registration. Latest information on NVMJST2D6N08HTXG: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NVMJST2D6N08HTXG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4405 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	10-TCPAK
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	5.3W (Ta), 116W (Tc)
Series	Automotive, AEC-Q101
Package / Case	10-PowerLSOP (0.209", 5.30mm Width) Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28A (Ta), 131.5A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)