Home / FET, MOSFET Arrays / NXH010P120MNF1PNG

NXH010P120MNF1PNG

onsemi

Product No:

NXH010P120MNF1PNG

Manufacturer:

onsemi

Package:

Batch:

Datasheet:

Description:

PIM F1 SIC HALFBRIDGE 1200V 10MO

Quantity:

Delivery:

Payment:

In Stock : 23

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$176.0255

$176.0255
10

$168.587

$1685.87
28

$164.868424

$4616.315872

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NXH010P120MNF1PNG, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NXH010P120MNF1PNG and the required quantity in your RFQ. IICSEMI provides the latest quote for NXH010P120MNF1PNG without requiring registration. Latest information on NXH010P120MNF1PNG: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NXH010P120MNF1PNG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	4707pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	454nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	14mOhm @ 100A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 40mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	250W (Tj)
Current - Continuous Drain (Id) @ 25°C	114A (Tc)
Mfr	onsemi
Package	Tray
Base Product Number	NXH010