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PDTD123ET,215

NXP Semiconductors

Product No:

PDTD123ET,215

Manufacturer:

NXP Semiconductors

Package:

TO-236AB

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Datasheet:

Description:

SMALL SIGNAL BIPOLAR TRANSISTOR,

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Product Information

Parameter Info

User Guide

Current - Collector (Ic) (Max)	500 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Resistor - Base (R1)	2.2 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	TO-236AB
Series	PDTD123E
Transistor Type	NPN - Pre-Biased
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	250 mW
Resistor - Emitter Base (R2)	2.2 kOhms
Mfr	NXP Semiconductors
Current - Collector Cutoff (Max)	500nA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V