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PHT6NQ10T,135

NXP USA Inc.

Product No:

PHT6NQ10T,135

Manufacturer:

NXP USA Inc.

Package:

SOT-223

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Description:

3A, 100V, 0.09OHM, N-CHANNEL POW

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Product Information

Parameter Info

User Guide

Operating Temperature	-65°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.8W (Ta), 8.3W (Tc)
Series	TrenchMOS™
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk